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Изобр. | Партномер | Производитель | Описание | Datasheet | RoHS | Вид монтажа | Упаковка / блок | Размер памяти | Организация | Тип интерфейса | Время доступа | Сохранение данных | Максимальная тактовая частота | Напряжение питания - макс. | Напряжение питания - мин. | Напряжение питания - макс. | Минимальная рабочая температура | Максимальная рабочая температура | Серия | Квалификация | Упаковка |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
11AA010-I/TO | Microchip Technology | EEPROM 1K 128 X 8 1.8V SERIAL EE, IND | Нет | Through Hole | TO-92-3 | 1 kbit | 128 x 8 | Serial, 1-Wire, SDQ | 200 Year | 11AA010 | Bulk | ||||||||||
11AA020-I/P | Microchip Technology | EEPROM 2K 256X8 1.8V SERIAL EE IND | Нет | Through Hole | DIP-8 | 2 kbit | 256 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 1.8 V | 5.5 V | - 40 C | + 85 C | 11AA020 | Tube | ||||
11AA020-I/TO | Microchip Technology | EEPROM 2K 256 X 8 1.8V SERIAL EE, IND | Нет | Through Hole | TO-92-3 | 2 kbit | 256 x 8 | Serial, 1-Wire, SDQ | 200 Year | 11AA020 | Bulk | ||||||||||
11AA040-I/P | Microchip Technology | EEPROM 4K 512X8 1.8V SERIAL EE IND | Нет | Through Hole | DIP-8 | 4 kbit | 512 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 1.8 V | 5.5 V | - 40 C | + 85 C | 11AA040 | Tube | ||||
11AA040-I/TO | Microchip Technology | EEPROM 4K 512 X 8 1.8V SERIAL EE, IND | Нет | Through Hole | TO-92-3 | 4 kbit | 512 x 8 | Serial, 2-Wire, I2C | 200 Year | 11AA040 | Bulk | ||||||||||
11AA080-I/P | Microchip Technology | EEPROM 8K 1024X8 1.8V SERIAL EE IND | Нет | Through Hole | DIP-8 | 8 kbit | 1 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 1.8 V | 5.5 V | - 40 C | + 85 C | 11AA080 | Tube | ||||
11AA080-I/TO | Microchip Technology | EEPROM 8K 1024 X 8 1.8V SERIAL EE, IND | Нет | Through Hole | TO-92-3 | 8 kbit | 1 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 11AA080 | Bulk | ||||||||||
11AA160-I/P | Microchip Technology | EEPROM 16K 2048X8 1.8V SERIAL EE IND | Нет | Through Hole | DIP-8 | 16 kbit | 2 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 1.8 V | 5.5 V | - 40 C | + 85 C | 11AA160 | Tube | ||||
11AA160-I/TO | Microchip Technology | EEPROM 16K 2048 X 8 1.8V SERIAL EE, IND | Нет | Through Hole | TO-92-3 | 16 kbit | 2 k x 8 | Serial, 2-Wire, I2C | 200 Year | 11AA160 | Bulk | ||||||||||
11AA161-I/P | Microchip Technology | EEPROM 16K 2048 X 8 1.8V SERIAL EE IND | Нет | Through Hole | PDIP-8 | 16 kbit | 2 k x 8 | Serial, 2-Wire, I2C | 200 Year | 100 kHz | 1 mA | + 85 C | 11AA160 | Tube | |||||||
11AA161-I/TO | Microchip Technology | EEPROM 16K 2048 X 8 1.8V SERIAL EE IND | Нет | Through Hole | TO-92-3 | 16 kbit | 2 k x 8 | Serial, 2-Wire, I2C | 200 Year | 100 kHz | 1 mA | + 85 C | 11AA160 | Bulk | |||||||
11LC010-E/P | Microchip Technology | EEPROM 1K 128 X 8 2.5V SERIAL EE EXT | Нет | Through Hole | DIP-8 | 1 kbit | 128 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 125 C | 11LC010 | Tube | ||||
11LC010-I/P | Microchip Technology | EEPROM 1K 128X8 2.5V SERIAL EE IND | Нет | Through Hole | DIP-8 | 1 kbit | 128 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 85 C | 11LC010 | Tube | ||||
11LC020-E/P | Microchip Technology | EEPROM 2K 256 X 8 2.5V SERIAL EE EXT | Нет | Through Hole | DIP-8 | 2 kbit | 256 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 125 C | 11LC020 | Tube | ||||
11LC020-I/P | Microchip Technology | EEPROM 2K 256X8 2.5V SERIAL EE IND | Нет | Through Hole | DIP-8 | 2 kbit | 256 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 85 C | 11LC020 | Tube | ||||
11LC040-E/P | Microchip Technology | EEPROM 4K 512 X 8 2.5V SERIAL EE EXT | Нет | Through Hole | DIP-8 | 4 kbit | 512 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 125 C | 11LC040 | Tube | ||||
11LC040-I/P | Microchip Technology | EEPROM 4K 512X8 2.5V SERIAL EE IND | Нет | Through Hole | DIP-8 | 4 kbit | 512 x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 85 C | 11LC040 | Tube | ||||
11LC080-E/P | Microchip Technology | EEPROM 8K 1024 X 8 2.5V SERIAL EE EXT | Нет | Through Hole | DIP-8 | 8 kbit | 1 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 125 C | 11LC080 | Tube | ||||
11LC080-I/P | Microchip Technology | EEPROM 8K 1024X8 2.5V SERIAL EE IND | Нет | Through Hole | DIP-8 | 8 kbit | 1 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 85 C | 11LC080 | Tube | ||||
11LC160-E/P | Microchip Technology | EEPROM 16K 2048 X 8 2.5V SERIAL EE EXT | Нет | Through Hole | DIP-8 | 16 kbit | 2 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 125 C | 11LC160 | Tube | ||||
11LC160-I/P | Microchip Technology | EEPROM 16K 2048X8 2.5V SERIAL EE IND | Нет | Through Hole | DIP-8 | 16 kbit | 2 k x 8 | Serial, 1-Wire, SDQ | 200 Year | 100 kHz | 50 uA | 2.5 V | 5.5 V | - 40 C | + 85 C | 11LC160 | Tube | ||||
11LC161-E/P | Microchip Technology | EEPROM 16K 2048 X 8 2.5V SERIAL EE EXT | Нет | Through Hole | PDIP-8 | 16 kbit | 2 k x 8 | Serial, 2-Wire, I2C | 200 Year | 100 kHz | 1 mA | + 125 C | 11LC161 | Tube | |||||||
11LC161-I/P | Microchip Technology | EEPROM 16K 2048 X 8 2.5V SERIAL EE IND | Нет | Through Hole | PDIP-8 | 16 kbit | 2 k x 8 | Serial, 2-Wire, I2C | 200 Year | 100 kHz | 1 mA | + 85 C | 11LC161 | Tube | |||||||
11LC161-I/TO | Microchip Technology | EEPROM 16K 2048 X 8 1.8V SERIAL EE IND | Нет | Through Hole | TO-92-3 | 16 kbit | 2 k x 8 | Serial, 2-Wire, I2C | 200 Year | 100 kHz | 1 mA | + 85 C | 11LC161 | Bulk | |||||||
24AA00-I/P | Microchip Technology | EEPROM 16byte 128kb 1.8V | Нет | Through Hole | PDIP-8 | 128 bit | 16 x 8 | Serial, 2-Wire, I2C | 900 ns | 200 Year | 400 kHz | 2 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | Tube |
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