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Изобр. | Партномер | Производитель | Описание | Datasheet | RoHS | Размер памяти | Организация | Время доступа | Максимальная тактовая частота | Тип интерфейса | Напряжение питания - макс. | Напряжение питания - мин. | Напряжение питания - макс. | Минимальная рабочая температура | Максимальная рабочая температура | Вид монтажа | Упаковка / блок | Квалификация | Упаковка |
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GS816218DB-200V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 6.5 ns | 200 MHz | Parallel | 2.7 V | 1.7 V | 190 mA, 195 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-250 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5.5 ns | 250 MHz | Parallel | 3.6 V | 2.3 V | 210 mA, 230 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-250IV | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5.5 ns | 250 MHz | Parallel | 2.7 V | 1.7 V | 225 mA, 245 mA | - 40 C | + 85 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-250V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5.5 ns | 250 MHz | Parallel | 2.7 V | 1.7 V | 205 mA, 225 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-333 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4.5 ns | 333 MHz | Parallel | 3.6 V | 2.3 V | 240 mA, 285 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-333I | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4.5 ns | 333 MHz | Parallel | 3.6 V | 2.3 V | 260 mA, 305 mA | - 40 C | + 85 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-333IV | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5 ns | 333 MHz | Parallel | 2.7 V | 1.7 V | 240 mA, 300 mA | - 40 C | + 85 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-333V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5 ns | 333 MHz | Parallel | 2.7 V | 1.7 V | 220 mA, 280 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-375 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4.2 ns | 375 MHz | Parallel | 3.6 V | 2.3 V | 250 mA, 320 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-375I | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4.2 ns | 375 MHz | Parallel | 3.6 V | 2.3 V | 270 mA, 340 mA | - 40 C | + 85 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-400 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4 ns | 400 MHz | Parallel | 3.6 V | 2.3 V | 255 mA, 335 mA | 0 C | + 70 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DB-400I | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4 ns | 400 MHz | Parallel | 3.6 V | 2.3 V | 275 mA, 355 mA | - 40 C | + 85 C | SMD/SMT | BGA-119 | Tray | |||
GS816218DD-150 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 7.5 ns | 150 MHz | Parallel | 3.6 V | 2.3 V | 170 mA, 180 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-150IV | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 7.5 ns | 150 MHz | Parallel | 2.7 V | 1.7 V | 180 mA, 200 mA | - 40 C | + 85 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-150V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 7.5 ns | 150 MHz | Parallel | 2.7 V | 1.7 V | 160 mA, 180 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-200 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 6.5 ns | 200 MHz | Parallel | 3.6 V | 2.3 V | 195 mA, 195 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-200IV | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 6.5 ns | 200 MHz | Parallel | 2.7 V | 1.7 V | 210 mA, 215 mA | - 40 C | + 85 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-200M | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 6.5 ns | 200 MHz | Parallel | 3.6 V | 2.3 V | 240 mA, 245 mA | - 55 C | + 125 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-200V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 6.5 ns | 200 MHz | Parallel | 2.7 V | 1.7 V | 190 mA, 195 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-250 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5.5 ns | 250 MHz | Parallel | 3.6 V | 2.3 V | 210 mA, 230 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-250V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5.5 ns | 250 MHz | Parallel | 2.7 V | 1.7 V | 205 mA, 225 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-333 | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4.5 ns | 333 MHz | Parallel | 3.6 V | 2.3 V | 240 mA, 285 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-333I | GSI Technology | Стат. ОЗУ 2.5 or 3.3V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 4.5 ns | 333 MHz | Parallel | 3.6 V | 2.3 V | 260 mA, 305 mA | - 40 C | + 85 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-333IV | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5 ns | 333 MHz | Parallel | 2.7 V | 1.7 V | 240 mA, 300 mA | - 40 C | + 85 C | SMD/SMT | BGA-165 | Tray | |||
GS816218DD-333V | GSI Technology | Стат. ОЗУ 1.8/2.5V 1M x 18 18M | Да | 18 Mbit | 1 M x 18 | 5 ns | 333 MHz | Parallel | 2.7 V | 1.7 V | 220 mA, 280 mA | 0 C | + 70 C | SMD/SMT | BGA-165 | Tray |
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