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Изобр. | Партномер | Производитель | Описание | Datasheet | RoHS | Вид монтажа | Упаковка / блок | Размер памяти | Организация | Тип интерфейса | Время доступа | Сохранение данных | Максимальная тактовая частота | Напряжение питания - макс. | Напряжение питания - мин. | Напряжение питания - макс. | Минимальная рабочая температура | Максимальная рабочая температура | Серия | Квалификация | Упаковка |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
25LC320A-I/P | Microchip Technology | EEPROM 32K 4KX8 2.5V SER EE IND | Нет | Through Hole | PDIP-8 | 32 kbit | 4 k x 8 | Serial, 4-Wire, SDI, SPI | 50 ns | 200 Year | 10 MHz | 5 mA | 2.5 V | 5.5 V | - 40 C | + 85 C | 25LC320A | Tube | |||
25LC320/P | Microchip Technology | EEPROM 4kx8 | Нет | Through Hole | PDIP-8 | 32 kbit | 4 k x 8 | Serial, 4-Wire, SDI, SPI | 230 ns | 200 Year | 2 MHz | 5 mA | 2.5 V | 5.5 V | 0 C | + 70 C | Tube | ||||
25LC512-E/P | Microchip Technology | EEPROM 512k 64KX8 2.5V SER EE EXT | Нет | Through Hole | PDIP-8 | 512 kbit | 64 k x 8 | Serial, 4-Wire, SDI, SPI | 50 ns | 200 Year | 20 MHz | 7 mA | 2.5 V | 5.5 V | - 40 C | + 125 C | Tube | ||||
25LC512-I/P | Microchip Technology | EEPROM 512k 64Kx8 2.5V SER EE IND | Нет | Through Hole | PDIP-8 | 512 kbit | 64 k x 8 | Serial, 4-Wire, SDI, SPI | 50 ns | 200 Year | 20 MHz | 7 mA | 2.5 V | 5.5 V | - 40 C | + 85 C | Tube | ||||
25LC640-E/P | Microchip Technology | EEPROM 8kx8 - 2.5V | Нет | Through Hole | PDIP-8 | 64 kbit | 8 k x 8 | Serial, 4-Wire, SDI, SPI | 150 ns | 200 Year | 2 MHz | 5 mA | 4.5 V | 5.5 V | - 40 C | + 125 C | Tube | ||||
25LC640-I/P | Microchip Technology | EEPROM 8kx8 - 2.5V | Нет | Through Hole | PDIP-8 | 64 kbit | 8 k x 8 | Serial, 4-Wire, SDI, SPI | 230 ns | 200 Year | 2 MHz | 5 mA | 2.5 V | 5.5 V | - 40 C | + 85 C | Tube | ||||
25LC640A-E/P | Microchip Technology | EEPROM 64K 8K X 8 25V SER EE EXT | Нет | Through Hole | PDIP-8 | 64 kbit | 8 k x 8 | Serial, 4-Wire, SDI, SPI | 100 ns | 200 Year | 10 MHz | 5 mA | 2.5 V | 5.5 V | - 40 C | + 125 C | Tube | ||||
25LC640A-I/P | Microchip Technology | EEPROM 64K 8KX8 2.5V SER EE IND | Нет | Through Hole | PDIP-8 | 64 kbit | 8 k x 8 | Serial, 4-Wire, SDI, SPI | 100 ns | 200 Year | 10 MHz | 5 mA | 2.5 V | 5.5 V | - 40 C | + 85 C | Tube | ||||
34AA02-E/P | Microchip Technology | EEPROM 2K 256 X 8 1.8V SERIAL EE EXT | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8 | Serial, 2-Wire, I2C | 900 ns | 200 Year | 400 kHz | 3 mA | 1.7 V | 5.5 V | - 40 C | + 125 C | 34AA02 | Tube | |||
34AA02-I/P | Microchip Technology | EEPROM 2K 256 X 8 18V SERIAL EE IND | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8 | Serial, 2-Wire, I2C | 900 ns | 200 Year | 400 kHz | 3 mA | 1.7 V | 5.5 V | - 40 C | + 85 C | 34AA02 | Tube | |||
34AA04-E/P | Microchip Technology | EEPROM 4K Serial EEPROM SPD EEPROM for DDR4 | Нет | Through Hole | PDIP-8 | 4 kbit | 512 x 8 | Serial, 2-Wire, I2C | 200 Year | 1 MHz | 1.5 mA | 1.7 V | 3.6 V | - 40 C | + 125 C | 34AA04 | Tube | ||||
34AA04-I/P | Microchip Technology | EEPROM 4K Serial EEPROM SPD EEPROM for DDR4 | Нет | Through Hole | PDIP-8 | 4 kbit | 512 x 8 | Serial, 2-Wire, I2C | 200 Year | 1 MHz | 1.5 mA | 1.7 V | 3.6 V | - 40 C | + 85 C | 34AA04 | Tube | ||||
34LC02-E/P | Microchip Technology | EEPROM 2K 256X8 2.5V SERIAL EE IND | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8 | Serial, 2-Wire, I2C | 400 ns | 200 Year | 1 MHz | 3 mA | 2.2 V | 5.5 V | - 40 C | + 125 C | 34LC02 | Tube | |||
34LC02-I/P | Microchip Technology | EEPROM 2K 256 X 8 25V SERIAL EE IND | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8 | Serial, 2-Wire, I2C | 400 ns | 200 Year | 1 MHz | 3 mA | 2.2 V | 5.5 V | - 40 C | + 85 C | 34LC02 | Tube | |||
34VL02/P | Microchip Technology | EEPROM 2K 256X8 1.5V SERIAL EE | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8 | Serial, 2-Wire, I2C | 900 ns | 200 Year | 400 kHz | 3 mA | 1.5 V | 3.6 V | - 20 C | + 85 C | 34VL02 | Tube | |||
93AA46-I/P | Microchip Technology | EEPROM 128x8-64x16 - 1.8V | Нет | Through Hole | PDIP-8 | 1 kbit | 128 x 8, 64 x 16 | Serial, 3-Wire, Microwire | 200 Year | 2 MHz | 3 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | 93AA46 | Tube | ||||
93AA46A-I/P | Microchip Technology | EEPROM 128x8 | Нет | Through Hole | PDIP-8 | 1 kbit | 128 x 8 | Serial, 3-Wire, Microwire | 250 ns | 200 Year | 1 MHz | 2 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | 93AA46A/B/C | Tube | |||
93AA46B-I/P | Microchip Technology | EEPROM 64x16 | Нет | Through Hole | PDIP-8 | 1 kbit | 64 x 16 | Serial, 3-Wire, Microwire | 250 ns | 200 Year | 1 MHz | 2 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | 93AA46A/B/C | Tube | |||
93AA46C-I/P | Microchip Technology | EEPROM 128x8 Or 64x16 | Нет | Through Hole | PDIP-8 | 1 kbit | 128 x 8, 64 x 16 | Serial, 3-Wire, Microwire | 6 ms | 200 Year | 1 MHz | 2 mA, 1 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | 93AA46A/B/C | Tube | |||
93AA46/P | Microchip Technology | EEPROM 128x8-64x16 1.8V | Нет | Through Hole | PDIP-8 | 1 kbit | 128 x 8, 64 x 16 | Serial, 3-Wire, Microwire | 200 Year | 2 MHz | 3 mA | 1.8 V | 5.5 V | 0 C | + 70 C | 93AA46 | Tube | ||||
93AA56-I/P | Microchip Technology | EEPROM 256x8-128x16 - 1.8V | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8, 128 x 16 | Serial, 3-Wire, Microwire | 200 Year | 2 MHz | 3 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | 93AA46 | Tube | ||||
93AA56/P | Microchip Technology | EEPROM 256x8-128x16 - 1.8V | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8, 128 x 16 | Serial, 3-Wire, Microwire | 200 Year | 2 MHz | 3 mA | 1.8 V | 5.5 V | 0 C | + 70 C | 93AA46 | Tube | ||||
93AA56A-I/P | Microchip Technology | EEPROM 256x8 - 1.8V | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8 | Serial, 3-Wire, Microwire | 250 ns | 200 Year | 1 MHz | 2 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | Tube | ||||
93AA56B-I/P | Microchip Technology | EEPROM 128x16 - 1.8V | Нет | Through Hole | PDIP-8 | 2 kbit | 128 x 16 | Serial, 3-Wire, Microwire | 250 ns | 200 Year | 2 MHz | 2 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | Tube | ||||
93AA56C-I/P | Microchip Technology | EEPROM 256x8-128x16 - 1.8V | Нет | Through Hole | PDIP-8 | 2 kbit | 256 x 8, 128 x 16 | Serial, 3-Wire, Microwire | 200 ns | 200 Year | 3 MHz | 2 mA | 1.8 V | 5.5 V | - 40 C | + 85 C | Tube |
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