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Изобр. | Партномер | Производитель | Описание | Datasheet | RoHS | Тип | Ширина шины данных | Организация | Упаковка / блок | Размер памяти | Максимальная тактовая частота | Время доступа | Напряжение питания - макс. | Напряжение питания - мин. | Напряжение питания - макс. | Минимальная рабочая температура | Максимальная рабочая температура | Серия | Квалификация | Упаковка |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IS49NLS18160-25BI | ISSI | DRAM 288Mbit x18 Separate I/O 400MHz Leaded IT | Да | RLDRAM2 | 18 bit | 16 M x 18 | BGA-144 | 288 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | - 40 C | + 85 C | IS49NLS18160 | Tray | |||
IS49NLS18160-25BL | ISSI | DRAM 288Mbit x18 Separate I/O 400Mhz RLDRAM2 | Нет | RLDRAM2 | 18 bit | 16 M x 18 | BGA-144 | 288 Mbit | 400 MHz | 2.5 ns | 2.63 V | 2.38 V | 408 mA | 0 C | + 70 C | IS49NLS18160 | Tray | |||
IS49NLS18160-33BI | ISSI | DRAM 288Mbit x18 Separate I/O 300MHz Leaded IT | Да | RLDRAM2 | 18 bit | 16 M x 18 | BGA-144 | 288 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | - 40 C | + 85 C | IS49NLS18160 | Tray | |||
IS49NLS18160-33BL | ISSI | DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2 | Нет | RLDRAM2 | 18 bit | 16 M x 18 | BGA-144 | 288 Mbit | 300 MHz | 3.3 ns | 2.63 V | 2.38 V | 368 mA | 0 C | + 70 C | IS49NLS18160 | Tray | |||
IS49NLS18320-25B | ISSI | DRAM 576Mbit x18 Separate I/O 400MHz Leaded | Да | RLDRAM2 | 18 bit | 32 M x 18 | BGA-144 | 576 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | 0 C | + 70 C | IS49NLS18320 | Tray | |||
IS49NLS18320-33B | ISSI | DRAM 576Mbit x18 Separate I/O 300MHz Leaded | Да | RLDRAM2 | 18 bit | 32 M x 18 | BGA-144 | 576 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | 0 C | + 70 C | IS49NLS18320 | Tray | |||
IS49NLS18320-25BI | ISSI | DRAM 576Mbit x18 Separate I/O 400MHz Leaded IT | Да | RLDRAM2 | 18 bit | 32 M x 18 | BGA-144 | 576 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | - 40 C | + 85 C | IS49NLS18320 | Tray | |||
IS49NLS18320-25BL | ISSI | DRAM 576Mbit x18 Separate I/O 400Mhz RLDRAM2 | Нет | RLDRAM2 | 18 bit | 32 M x 18 | BGA-144 | 576 Mbit | 400 MHz | 2.5 ns | 2.63 V | 2.38 V | 408 mA | 0 C | + 70 C | IS49NLS18320 | Tray | |||
IS49NLS18320-33BI | ISSI | DRAM 576Mbit x18 Separate I/O 300MHz Leaded IT | Да | RLDRAM2 | 18 bit | 32 M x 18 | BGA-144 | 576 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | - 40 C | + 85 C | IS49NLS18320 | Tray | |||
IS49NLS18320-33BL | ISSI | DRAM 576Mbit x18 Separate I/O 300MHz RLDRAM2 | Нет | RLDRAM2 | 18 bit | 32 M x 18 | BGA-144 | 576 Mbit | 300 MHz | 3.3 ns | 2.63 V | 2.38 V | 368 mA | 0 C | + 70 C | IS49NLS18320 | Tray | |||
IS49NLS93200-25B | ISSI | DRAM 288Mbit x9 Separate I/O 400MHz Leaded | Да | RLDRAM2 | 9 bit | 32 M x 9 | BGA-144 | 288 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | 0 C | + 70 C | IS49NLS93200 | Tray | |||
IS49NLS93200-33B | ISSI | DRAM 288Mbit x9 Separate I/O 300MHz Leaded | Да | RLDRAM2 | 9 bit | 32 M x 9 | BGA-144 | 288 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | 0 C | + 70 C | IS49NLS93200 | Tray | |||
IS49NLS93200-25BI | ISSI | DRAM 288Mbit x9 Separate I/O 400MHz Leaded IT | Да | RLDRAM2 | 9 bit | 32 M x 9 | BGA-144 | 288 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | - 40 C | + 85 C | IS49NLS93200 | Tray | |||
IS49NLS93200-25BL | ISSI | DRAM 288Mbit x9 Separate I/O 400Mhz RLDRAM2 | Нет | RLDRAM2 | 9 bit | 32 M x 9 | BGA-144 | 288 Mbit | 400 MHz | 2.5 ns | 2.63 V | 2.38 V | 408 mA | 0 C | + 70 C | IS49NLS93200 | Tray | |||
IS49NLS93200-33BI | ISSI | DRAM 288Mbit x9 Separate I/O 300MHz Leaded IT | Да | RLDRAM2 | 9 bit | 32 M x 9 | BGA-144 | 288 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | - 40 C | + 85 C | IS49NLS93200 | Tray | |||
IS49NLS93200-33BL | ISSI | DRAM 288Mbit x9 Separate I/O 300MHz RLDRAM2 | Нет | RLDRAM2 | 9 bit | 32 M x 9 | BGA-144 | 288 Mbit | 300 MHz | 3.3 ns | 2.63 V | 2.38 V | 368 mA | 0 C | + 70 C | IS49NLS93200 | Tray | |||
IS49NLS96400-25B | ISSI | DRAM 576Mbit x9 Separate I/O 400MHz Leaded | Да | RLDRAM2 | 9 bit | 64 M x 9 | BGA-144 | 576 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | 0 C | + 70 C | IS49NLS96400 | Tray | |||
IS49NLS96400-33B | ISSI | DRAM 576Mbit x9 Separate I/O 300MHz Leaded | Да | RLDRAM2 | 9 bit | 64 M x 9 | BGA-144 | 576 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | 0 C | + 70 C | IS49NLS96400 | Tray | |||
IS49NLS96400-25BI | ISSI | DRAM 576Mbit x9 Separate I/O 400MHz Leaded IT | Да | RLDRAM2 | 9 bit | 64 M x 9 | BGA-144 | 576 Mbit | 400 MHz | 2.5 ns | 1.9 V | 1.7 V | 408 mA | - 40 C | + 85 C | IS49NLS96400 | Tray | |||
IS49NLS96400-25BL | ISSI | DRAM 576Mbit x9 Separate I/O 400Mhz RLDRAM2 | Нет | RLDRAM2 | 9 bit | 64 M x 9 | BGA-144 | 576 Mbit | 400 MHz | 2.5 ns | 2.63 V | 2.38 V | 408 mA | 0 C | + 70 C | IS49NLS96400 | Tray | |||
IS49NLS96400-33BI | ISSI | DRAM 576Mbit x9 Separate I/O 300MHz Leaded IT | Да | RLDRAM2 | 9 bit | 64 M x 9 | BGA-144 | 576 Mbit | 300 MHz | 3.3 ns | 1.9 V | 1.7 V | 368 mA | - 40 C | + 85 C | IS49NLS96400 | Tray | |||
IS49NLS96400-33BL | ISSI | DRAM 576Mbit x9 Separate I/O 300MHz RLDRAM2 | Нет | RLDRAM2 | 9 bit | 64 M x 9 | BGA-144 | 576 Mbit | 300 MHz | 3.3 ns | 2.63 V | 2.38 V | 368 mA | 0 C | + 70 C | IS49NLS96400 | Tray | |||
MT44K32M36RB-083F:A TR | Micron | DRAM RLDRAM 3 1.125G 32MX36 TBGA | Нет | RLDRAM3 | 36 bit | 32 M x 36 | BGA-168 | 1.125 Gbit | 1200 MHz | 1.42 V | 1.28 V | 1340 mA | 0 C | + 95 C | MT44K | Reel | ||||
MT44K32M36RB-093E:A TR | Micron | DRAM RLDRAM 3 1.125G 32MX36 TBGA | Нет | RLDRAM3 | 36 bit | 32 M x 36 | BGA-168 | 1.125 Gbit | 1200 MHz | 1.42 V | 1.28 V | 1210 mA | 0 C | + 95 C | MT44K | Reel | ||||
MT44K32M36RB-107E:A TR | Micron | DRAM RLDRAM 3 1.125G 32MX36 TBGA | Нет | RLDRAM3 | 36 bit | 32 M x 36 | BGA-168 | 1.125 Gbit | 1200 MHz | 1.42 V | 1.28 V | 1070 mA | 0 C | + 95 C | MT44K | Reel |
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